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INDONESIA
Jurnal Matematika & Sains
Published by Institut Teknologi Bandung
ISSN : -     EISSN : -     DOI : -
Core Subject : Education,
Mathematics
Arjuna Subject : -
Articles 6 Documents
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Search results for , issue " Vol 10, No 1 (2005)" : 6 Documents clear
Trangene Inheritance in Transgenic Wheat Zainudin Basri
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Abstract

The achievement in genetic transformation is not only determined by the success in integrating transgenes into the plant genome, but also by the ability of transgenes to be stably expressed in the following generations. Transgenes integrated into trangenic wheat obtained via microprojectile bombardment method could be transmitted and, in most cases, expressed until the third generation as demonstrated in this study. The expression of the GUS gene was stable as observed in leaves, microspores, anthers, ovaries and seeds. Nevertheless, the bar gene appeared to undergo a reduction or disappearance in expression in a number of plants from the first to the third generation.
Karakteristik Film Tipis GaAs yang Ditumbuhkan dengan Metode MOCVD Menggunakan Sumber Metalorganik TDMAAs (Trisdimethylaminoarsenic) Andi Suhandi; Heri Sutanto; Pepen Arifin; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Abstract

Gallium Arsenide (GaAs) film have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) method on Semi Insulating-Gallium Arsenide (SI-GaAs) substrates using of Trisdimethylaminoarsenic (TDMAAs) and Trimethylgallium (TMGa) precursors. The characteristic of GaAs film strongly depends on growth temperature. The best crystallinity quality of film was obtained at growth temperature, V/III ratio, reactor pressure, N2 and H2 dilute are 580 oC, 4.8, 50 torr, 300 sccm, respectively. X-ray diffraction data indicate that the GaAs films grown at 580 oC show epitaxial layer with FWHM on (200) peak of about 0,477o. Hall effect measurement data indicate that the grown layer were p-type semiconductor, with Hall mobility and carrier concentration in the range of 346 cm2/V.s and 3.17 x 1017 cm-3, respectively. The band gap of GaAs films determined by photoluminiscense (PL) measurement was 1,42 eV. This value is same as the band gap of bulk GaAs.
Fabrication and Characterization of Metal-Semiconductor-Metal n-GaN UV Photodetector by PA-MOCVD Dadi Rusdiana; Sugianto Sugianto; Andi Suhandi; Sukirno Sukirno; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Abstract

Metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN epitaxial layers grown on (0001) sapphire by plasma-assisted metal organic chemical vapor deposition (PA-MOCVD) method. The photodetector with a thin GaN layer of 0.7 µm exhibited a low dark current with a saturation value of 1.469 x 10-14 A. The responsivity was 0.56 A/W at a wavelength of 320 nm under a bias voltage of 2.5 V.
Efek Magnetisasi Spontan dan Karakteristik Transport Listrik Film Tipis TiO2:Co yang ditumbuhkan dengan Metode MOCVD Horasdia Saragih; Pepen Arifin; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Abstract

TiO2:Co thin films were grown on Si(100) substrate by MOCVD method. The Co content in the film was varied in the range of 0.73% to 12.19%. The spontaneous magnetization effect and the electrical transport of films were measured by means of a Hall effect measurement. The Hall resistivity as a function of the magnetic field data show that the spontaneous magnetization effect occurs in films at the field lower than 1500 Oe. The Hall resistivity increases with the increase of Co concentration. The measurement of resistivity as function of temperature shows that the films have semiconductive properties. The minimum resistivity increases with increasing Co.
Optimasi Parameter Tekanan Deposisi pada Penumbuhan Lapisan Tipis Polykristal Silikon dengan Metode Hot Wire Cell PECVD Amiruddin Supu; Ida Usman; Mursal Mursal; Toto Winata; Sukirno Sukirno
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Abstract

The Hot wire Cell PECVD method has been developed to grow the poly-Si thin films. The poly-Si thin films were grown on the 7059 corning glass at a filament temperature of 1800 oC. Silane (SiH4) gas 10% diluted in hydrogen (H2) gas was used as gas source. In the hot wire cell PECVD method, reactant gases were decomposed as a result of reaction with a heated filament placed above the substrate and paralel to the gas inlet. The characterization results exhibited that the poly-Si thin films could be grown at the pressure of 200 to 500 mTorr with a substrate temperature of 275 oC. The analysis of XRD result showed that preferential intensity was obtained at the crystal orientation of . The highest values of peak intensity (111 cps), grains size (minor axis 0.5 µm) and dark conductivity (0.60x10-5 Scm-1) were obtained at the deposition pressure of 300 mTorr with deposition rate of 2.2 nm/s.
Purifikasi Protein Fusi MBP-Mga Streptococcus pyogenes Hasil Ekspresi Heterolog di Escherichia coli Muhaimin Muhaimin; Oei Ban Liang; Enny Ratnaningsih; Endang Purwantini; Debbie Sofie Retnoningrum
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Abstract

Optimization of purification process of Streptococcus pyogenes’s MBP-Mga fusion protein from Escherichia coli pMALMga carrying mga49 gene had been carried out. The purification was conducted by using affinity chromatography column with amylose ligands. SDS-PAGE analysis gave a band at 104 kDa showing a pure MBP-Mga fusion protein.

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